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Found: 185 Displaying: 161 - 180| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 161. | HSA16C | 3.3 V, +/-100 ppm, TTL crystal clock oscillator | NELFC | SMD | 14 | -40°C | 85°C | 363K | | 162. | IDT71V35761SA166BG | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | BGA | 119 | 0°C | 70°C | 282K | | 163. | IDT71V35761SA166BGI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | BGA | 119 | -40°C | 85°C | 282K | | 164. | IDT71V35761SA166BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | FBGA | 165 | 0°C | 70°C | 282K | | 165. | IDT71V35761SA166BQI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | FBGA | 165 | -40°C | 85°C | 282K | | 166. | IDT71V35761YSA166BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | FBGA | 165 | 0°C | 70°C | 282K | | 167. | IDT71V35761YSA166BQI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | FBGA | 165 | -40°C | 85°C | 282K | | 168. | IDT71V35781SA166BQ | 256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | FBGA | 165 | 0°C | 70°C | 282K | | 169. | IDT71V35781SA166BQI | 256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | FBGA | 165 | -40°C | 85°C | 282K | | 170. | IDT71V35781YSA166BGI | 256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | BGA | 119 | -40°C | 85°C | 282K | | 171. | IDT71V35781YSA166BQI | 256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | IDT | FBGA | 165 | -40°C | 85°C | 282K | | 172. | KSA1614 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 47K | | 173. | SA16 | 16.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K | | 174. | SA160 | 160.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K | | 175. | SA160A | 160.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K | | 176. | SA1630 | 70-400 MHz, IF quadrature transceiver | PHLPS | LQFP | 48 | -40°C | 85°C | 160K | | 177. | SA1630BE | IF quadrature transceiver. | PHLPS | SOT313-2 | 48 | -40°C | 85°C | 571K | | 178. | SA1638BE | 70-400 MHz, low voltage IF I/Q transceiver | PHLPS | LQFP | 48 | -40°C | 85°C | 290K | | 179. | SA1638BE | Low voltage IF I/Q transceiver. | PHLPS | SOT313-2 | 48 | -40°C | 85°C | 393K | | 180. | SA16A | 16.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
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