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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | A-2308G | Common anode green alpha-numeric display | PARA | - | 18 | - | - | 87K |
| 22. | A62S6308G-10S | 100ns; 40mA 64K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | 0°C | 70°C | 179K |
| 23. | A62S6308G-10SI | 100ns; 40mA 64K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | -40°C | 85°C | 179K |
| 24. | A62S6308G-70S | 70ns; 40mA 64K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | 0°C | 70°C | 179K |
| 25. | A62S6308G-70SI | 70ns; 40mA 64K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | -40°C | 85°C | 179K |
| 26. | A62S8308G-55S | 55ns; 40mA 256K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | 0°C | 70°C | 278K |
| 27. | A62S8308G-55SI | 55ns; 40mA 256K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | -40°C | 85°C | 278K |
| 28. | A62S8308G-70S | 70ns; 40mA 256K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | 0°C | 70°C | 278K |
| 29. | A62S8308G-70SI | 70ns; 40mA 256K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | -40°C | 85°C | 278K |
| 30. | A62S9308G-70S | 70ns; 40mA 512K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | 0°C | 70°C | 276K |
| 31. | A62S9308G-70SI | 70ns; 40mA 512K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | -40°C | 85°C | 276K |
| 32. | A62S9308G-70SI | 70ns; 40mA 512K x 8bit low voltage CMOS SRAM | AMICC | BGA | 36 | -40°C | 85°C | 276K |
| 33. | C-2308G | Common cathode green alpha-numeric display | PARA | - | 18 | - | - | 87K |
| 34. | HER308G | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V. | JGD | - | 2 | -65°C | 150°C | 171K |
| 35. | KBPC308G | Single phase 3.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V. | JGD | KBPC-3 | 4 | -55°C | 150°C | 121K |
| 36. | UF308G | 800 V, 3 A, glass passivated junction ultrafast switching rectifier | TEL | - | 2 | -55°C | 150°C | 157K |
