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Found: 357      Displaying: 161 - 180
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
161.
ABR1002200 V, 10 A Avalanche bridge rectifier
EIC
BR10
4
-50°C
150°C
31K
162.
BR1002200 V, 10 A silicon bridge rectifier
EIC
BR10
4
-40°C
150°C
40K
163.
CM1002High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load 10A. Non-repetive peak forward surge current at rated load 200A.
PAJIT
CM-25
4
-55°C
150°C
65K
164.
CM1002High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load 10A. Non-repetive peak forward surge current at rated load 200A.
PAJIT
CM-25W
4
-55°C
150°C
65K
165.
FBR1002200 V, 10 A, fast recovery bridge rectifier
EIC
BR10
4
-50°C
150°C
19K
166.
HSH1002CEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
45K
167.
HSH1002GEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
47K
168.
HSH1002NEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
46K
169.
HSH1002NILOLamp for photolithography. Iding mode power 700 watts, current 27 amps(DC), voltage 26 volts(DC). Flash mode power 1000 watts, current 36 amps(DC), voltage 28 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
46K
170.
HSH1002UEOLamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
46K
171.
PB1002Reverse voltage: 200V, 10A bridge rectifier
WTE
-
4
-65°C
125°C
32K
172.
PB1002Reverse voltage: 200V, 10A bridge rectifier
WTE
-
4
-65°C
125°C
32K
173.
PB1002GReverse voltage: 200V, 10A glass passivated bridge rectifier
WTE
-
4
-55°C
150°C
34K
174.
PB1002GReverse voltage: 200V, 10A glass passivated bridge rectifier
WTE
-
4
-55°C
150°C
34K
175.
RBV1002200 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
19K
176.
RBV1002D200 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
41K
177.
TSA1002IFSM-10 BIT ADC
STM
-
-
-
-
239K
178.
UF1002Reverse voltage: 200.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220A
2
-65°C
150°C
44K
179.
UF1002CTReverse voltage: 200.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
48K
180.
UF1002CTReverse voltage: 200.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
48K
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